features trenchfet power mosfet low gate charge applications primary side switch SI4496DY vishay siliconix document number: 70685 s-03951?rev. c, 26-may-03 www.vishay.com 1 n-channel 100-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 100 0.025 @ v gs = 10 v 7.7 100 0.031 @ v gs = 6.0 v 6.9 so-8 sd sd sd gd 5 6 7 8 top view 2 3 4 1 d g s n-channel mosfet ordering information: SI4496DY SI4496DY-t1 (with t ape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 7.7 4.6 continuous drain current (t j = 150 c) a t a = 70 c i d 6.2 4.1 a pulsed drain current i dm 30 a single a valanch current l = 0 1 mh i as 35 single a valanch energy l = 0.1 mh e as 61 mj continuous source current (diode conduction) a i s 2.6 1.2 a maximum power dissipation a t a = 25 c p d 3.1 1.4 w maximum power dissipation a t a = 70 c p d 2.0 0.9 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 33 40 maximum junction-to-ambient a steady state r thja 73 90 c/w maximum junction-to-foot (drain) steady state r thjf 15 18 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI4496DY vishay siliconix www.vishay.com 2 document number: 70685 s-03951?rev. c, 26-may-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 v linear threshold voltage v t 4.4 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 80 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 80 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain source on state resistance a r ds( ) v gs = 10 v, i d = 7.7 a 0.021 0.025 drain-source on-state resistance a r ds(on) v gs = 6.0 v, i d = 6.9 a 0.025 0.031 forward transconductance a g fs v ds = 15 v, i d = 7.7 a 23 s diode forward voltage a v sd i s = 2.6 a, v gs = 0 v 0.75 1.2 v dynamic b total gate charge q g 29 36 gate-source charge q gs v ds = 50 v, v gs = 10 v, i d = 7.7 a 9.9 nc gate-drain charge q gd 10.3 gate resistance r g 0.5 1.2 1.9 turn-on delay time t d(on) 17 26 rise time t r v dd = 50 v, r l = 50 13 20 turn-off delay time t d(off) v dd = 50 v , r l = 50 i d 1.0 a, v gen = 10 v, r g = 6 36 54 ns fall time t f 26 40 source-drain reverse recovery time t rr i f = 2.6 a, di/dt = 100 a/ s 45 68 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 6 12 18 24 30 0123456 0 6 12 18 24 30 012345 v gs = 10 thru 6 v t c = 125 c -55 c 25 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 5 v 4 v
SI4496DY vishay siliconix document number: 70685 s-03951?rev. c, 26-may-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - on-resistance ( r ds(on) ) 0 500 1000 1500 2000 0 20406080 0.5 0.8 1.1 1.4 1.7 2.0 2.3 - 50 - 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 5 10 15 20 25 30 0.00 0.01 0.02 0.03 0.04 0 5 10 15 20 25 30 v ds - drain-to-source voltage (v) c rss c oss c iss v ds = 50 v i d = 7.7 a i d - drain current (a) v gs = 10 v i d = 7.7 a gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0246810 i d = 7.7 a 30 10 1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s v gs = 6 v v gs = 10 v t j = 150 c t j = 25 c
SI4496DY vishay siliconix www.vishay.com 4 document number: 70685 s-03951?rev. c, 26-may-03 typical characteristics (25 c unless noted) 10 -3 10 -2 1 10 600 10 -1 10 -4 100 - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold v oltage variance (v) v gs(th) t j - temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 73 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0 30 50 10 20 power (w) single pulse power time (sec) 1 600 10 40 0.1 0.01 10 -3 10 -2 10 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 1 100
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